Vishay launched a Schottky Diode Gen 5.0 silicon platform with 8 new devices. Featuring submicron trench technology, the family offers a maximum junction temperature of +175°C, making them suitable for automotive and other high-temperature applications. The devices are offered in small RoHS-compliant packages, with a reverse biased safe operating area (RBSOA) available. A breakdown voltage >115V accommodates voltage spikes and optimizes power density. The diodes are optimized for ac-to-dc, secondary rectification, flyback, buck and boost converters, half-bridge, reverse battery protection, freewheeling, class-D amplifiers, and dc-to-dc module applications.

Typical end products include high power density SMPS; adaptors for desktop PCs; servers; automotive drives and controls; telecom networks; consumer electronics like PDPs, LCDs, and high-efficiency audio systems; and mobile electronics such as notebook computers, cell phones, and portable media players. The devices offer a typical forward voltage drop from 0.55V at 8A to 0.61V at 30A, and typical reverse leakage from 1mA to 5.5mA at 125°C. They feature increased ruggedness for reverse avalanche capability, with parts 100% screened in avalanche, and negligible switching losses.