Vishay unveiled the first device built on its p-channel TrenchFET Gen III technology, a 20-V device with the footprint area of an SO-8. The Si7137DP offers an on-resistance of 1.9 mΩ at 10 V, 2.5 mΩ at 4.5 V, and 3.9 mΩ at 2.5 V. The Si7137DP will be used as the adaptor switch and for load switching applications in notebook computers and industrial/general systems. Adaptor switches (switching between the adaptor/wall power or the battery power) are always on and drawing current.

For applications such as these where a 20-V device is sufficient, the Si7137DP frees up designers from having to rely on 30-V power MOSFETs, which until recently were the only p-channel devices available within this very low on-resistance range. The closest 20-V p-channel device with a ≥ 12-V gate-to-source rating available from a competitor features on-resistance of 14 mΩ at 4.5-V gate drive and is not characterized for a 10-V gate-to-source voltage. The device is 100% Rg- and UIS-tested and halogen-free.