The three CMOS 4 x 2 matrix RF switches from NEC Electronics, which complement Gleichmann Electronics’ product portfolio, are comparable in performance to GaAs switches. All three devices can be used in a frequency range from 250 to 2150 MHz. The isolation parameters range from 35 dBm (0.25 to 0.95 GHz) for the devices μPD5715GR and μPD5716GR to 42 dBm (0.25 to 2.15 GHz) for the device μPD5720K. Insertion loss – depending on device type – is specified at 6.7 dBm or 6.9 dBm.

An additional 4-bit decoder was integrated in the μPD5720K HF switch. By means of this decoder, four SPDT switches can be saved by 8 x 2 multi-switch circuits. The possibility to construct multi-switches on only two levels provides the user with a significant space advantage compared to a traditional design with pin diodes.

The CMOS 4 x 2 matrix HF switches μPD5716GR and μPD5720K, designed for an operating ambient temperature range from -40 to +850C, require 5 V supply voltage; the μPD5715GR requires 3.3 V. The μPD5715GR and μPD5716GR devices are each offered in a Pb-free 16-pin Thermal Enhanced Thin Shrink Small Outline Package (HTSSOP); the μPD5720K HF switch in a 20-pin Quad Flat No-Lead (QFN) package.

Samples and product literature for the μPD5715GR, μPD5716GR and μPD5720K CMOS 4 x 2 matrix HF switches are available, upon request, from Gleichmann Electronics.