Cree’s silicon carbide (SiC) Metal-Semiconductor Field-Effect Transistors (MESFETs) are now in stock and ready for shipment from Digi-Key. Cree’s 10-watt CRF24010 and 60-watt CRF24060 are un-internally matched SiC RF transistors, capable of supporting wide operational bandwidths. SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. SiC MESFETs offer greater efficiency, greater power density, and wider bandwidths. SiC MESFETs are optimized for applications such as wideband military communications, secure homeland defense communications, Class A and A/B amplifiers, TDMA, EDGE, CDMA, W-CDMA broadband amplifiers, and WiMAX. Also available from Digi-Key are the CRF24010-TB and CRF24060-TB Demonstration Test Fixtures.