Fairchild Semiconductor has developed a family of 600V SuperFET MOSFETs specifically to address the DPAK (TO-252) device requirements of the ultra-slim, low-profile ballast applications. To minimize switching and conduction losses and meet system efficiency needs of these fast-switching lighting designs, Fairchild’s DPAK SuperFETs offer as little as one-third the on-resistance (0.6 ~ 1.2 Ohms) of traditional planar MOSFETs. They also have the ability to withstand both high-speed voltage (dv/dt)- and current (di/dt)-switching transients necessary for ballasts to operate reliably at very high frequencies. Typically, as the breakdown voltage of a standard MOSFET rises, its RDS(on) also goes up exponentially and leads to increased die size. Fairchild’s proprietary SuperFET technology changes this RDS(on)-to-die size relationship from an exponential to a linear one.