International Rectifier has introduced the IRGP50B60PD, a 600V non-punch-through (NPT) insulated gate bipolar transistor (IGBT) co-packaged (Co-Pack) with an enhanced 25A HEXFRED diode capable of operating at switching speeds up to 150kHz. The IRGP50B60PD expands the WARP2 product line-up of high frequency IGBT/HEXFRED diode Co-Pack devices. The new device has been enhanced with a higher current HEXFRED diode designed to handle high reverse current conditions. In addition, the new Co-Pack device features high efficiency performance for high current (1kW to 12kW), high frequency switch-mode power supply (SMPS) circuits in telecom and server systems. Applications include power factor correction (PFC) and full bridge primary switching, high power UPS, welding and industrial switching applications. The WARP2 IGBTs are made with IR's thin wafer technology, which ensures shorter minority carrier depletion time and fast turn-off. In addition, negligible turn-off tail current and low turn-off switching loss, or EOFF, enables designers to achieve higher operating frequencies.