Zetex Semiconductors has introduced three N-Channel enhancement mode MOSFETs, developed specifically for applications with limited drive voltage availability. The 20V ZXMN2B03E6 (SOT236), ZXMN2B14FH and ZXMN2B01F (both SOT23) are capable of low loss switching at a VGS of 1.8V, enabling them to be operated from two 1.2V cells or a single Li-Ion cell. Their low gate drive also means they can be driven directly by logic gates. RDS(ON) for the three MOSFETs is respectively guaranteed to be less than 75mΩ, 100mΩ and 200mΩ at 1.8VGS and 40mΩ, 55mΩ and 100mΩ at 4.5VGS. This makes them usefull for low voltage roles including level shifting for high side disconnect switches, external switching for boost converter circuits and buffering low voltage microcontrollers and loads such as motors and solenoids. Fast switching performance is another key feature of the company’s proprietary UMOS technology. For example, the ZXMN2B01F rise and fall times are just 3.6ns and 10.5ns, for VGS= 4.5V and ID=1A. Pricing at 1k volumes: US$0.165 (ZXMN2B01F), US$0.285 (ZXMN2B03E6) and US$0.270 (ZXMN2B14F).