TT electronics Optek Technology has developed a silicon phototransistor in a miniature surface mount package (0.10” [2.5mm] x 0.08” [2.0]). Designated the OP570 Series, the NPN phototransistors feature an integral lens. The phototransistors are being specified in applications such as non-contact position sensing, infrared data acquisition and detection, machine automation, optical encoders, and reflective and transmissive (interruptive) sensors. Electrical performance of the OP570 Series is characterized at collector-emitter breakdown voltages of 30V, emitter-collector breakdown voltage of 5V, collector current of 20mA and power dissipation of 130mW. On-state collector current is 2.5mA (min.), and the collector-emitter dark current is 100nA (max.). The devices are RoHS-compliant, as well as compatible with high temperature (260°C) lead free soldering processes. Operating temperature range is -25°C to +85°C. The OP570 are available with four different lead configurations, and are mechanically and spectrally matched to OPTEK’s OP270 Series 890nm GaAIAs infrared LEDs.