X-FAB Silicon Foundries announced the XH035 RF-CMOS process that provides access to building blocks for ISM Band and ZigBee applications. Furthermore a 0.18 micron RF-CMOS process, to be made available during the first half of 2007 with various modular options including non-volatile memory solutions and high-voltage functionality.

XH035 provides access to the Industrial, Scientific and Medical (ISM) 2.4GHz frequency band and to ZigBee applications for products that use the 2.4GHz portion of the radio spectrum. ZigBee is recognized as a cost-effective, standards-based wireless networking solution that supports low data rates, low power consumption, security and reliability. The new process allows the baseline 0.35um process to be freely combined with existing modules including high-voltage module and non-volatile memory. As a result, part of the baseline process can be added to an existing platform.

The XH035RF CMOS process provides inductors, varactors, MIM capacitors and RF MOS transistors, and is available with multiple digital library versions including 3.3 Volt generic and isolated 3.3 Volt. X-FAB offers prototyping solutions such as multi-project wafer (MPW) runs and multi-layer masks (MLMs) in which four process layers can be put onto one mask.