Infineon unveiled its SiGe:C (Silicon-Germanium Carbon) process technology for cost-effective, high-performance radio frequency (RF) semiconductor devices. The SiGe:C technology is the foundation for Infineon’s latest generation of Heterojunction Bipolar Transistors (HBTs), which provide the world’s lowest noise figures for silicon-based discrete transistors of only 0.75 dB at 6 GHz and high gain of up to 19 dB at 6 GHz. With the introduction of the new BFP740 HBT family, the company achieves silicon-based performance levels that could previously be attained only by using more expensive technologies based on gallium arsenide (GaAs).

The SiGe:C transistors are suitable for use in a wide range of RF and wireless applications using frequencies above 10 GHz, such as Low Noise Amplifiers (LNAs), microwave oscillators, and general-purpose amplifiers for various standards including Wireless LAN (802.11a, b, g), WiMAX, and Ultra Wide Band (UWB). Applications encompass Global Positioning Systems (GPS), cordless phones, satellite TV LNBs (Low Noise Blocks), and satellite-based broadcast services (e. g., XM Radio, Sirius, Digital Audio Broadcasting).

The RF transistors have a typical transition frequency of 42 GHz and provide the lowest noise figure levels currently available in the SiGe:C market: 0.5 dB at 1.8 GHz and 0.75 dB at 6 GHz, respectively. With a typical Gms (maximum stable power gain) of 28 dB at 1.8 GHz, typical Gma (maximum available power gain) of 19 dB at 6 GHz and low current operation, these devices are ideal for a wide range of RF and wireless applications, such as WLANs. Infineon’s HBT chips feature gold metallization for extra high reliability.

The Silicon-Germanium Carbon Process Technology

Unique to Infineon’s Silicon-Germanium Carbon process technology is a significantly reduced base resistance, leading to the industry’s lowest noise figures for silicon- based discrete transistors. In addition, a novel method for drastically reducing parasitic ground inductance was developed. This unique grounding concept permits attainment of high-gain values at higher frequencies while still employing proven, low-cost industry-standard plastic packages.

Availability, Packaging

The BFP740 HBT series is in volume production and available in standard SOT343 (BFP740) packages, flatlead TSFP-4 (BFP740F) packages and ultra small 3-pin leadless TSLP-3 (BFR740L3) packages. The TSLP-3 package size is only 1.0 mm x 0.6 mm x 0.4 mm.