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Synchronous N-channel MOSFET driver delivers 5A 20-03-08


Linear Technology introduces the LTC4443/-1, a synchronous MOSFET driver designed to drive upper and lower power N-Channel MOSFETs in synchronous rectified converter topologies. This driver, combined with power MOSFETs and one of Linear Technology’s many DC/DC controllers, forms a complete synchronous regulator that can be used as a step-down or step-up DC/DC converter. This driver can sink up to 5A and ource up to 2.4A, making it suited for driving high gate capacitance, high current MOSFETs.

 

The LTC4443/-1 can also drive multiple MOSFETs in parallel for higher current applications. The 12ns rise time and 8ns fall time when driving a 3,000 pF load, minimize switching losses. Adaptive shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize dead time. An integrated bootstrap schottky diode is incorporated. The LTC4443/-1 has a 3-state PWM input for power stage shut-down that is compatible with all multi-phase controllers employing a 3-state output feature. In addition, it has a separate supply for the input logic to match the signal swing of the controller IC and has an undervoltage lockout circuit on both the driver and logic supplies. Furthermore, this part drives both upper and lower MOSFET gates over a range of 6V to 9.5V and operates up to a 38V supply voltage. The -1 version has a higher VCC undervoltage lockout of 6.2V instead of 3.2V, intended to drive standard 5V logic N-Channel MOSFETs.

 

The LTC4443EDD and LTC4443EDD-1 are offered in a 3mm x 3mm DFN-12 package with prices starting at $1.35 for 1000-piece quantities. The LTC4443IDD and LTC4443IDD-1, tested and guaranteed to operate from -40°C to 85°C operating temperature range are priced at $1.50 in 1000-piece quantities.

 
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