Toshiba Electronics Europe (TEE) has announced breakthroughs in multi-bit-per-cell technology for NAND flash memories. In the 32 nanometer (nm) generation, Toshiba has realized a 3-bit-per-cell 32 gigabit (Gb) chip, smaller than a 2-bit-per-cell 16Gb chip fabricated with 43nm technology, which is currently in the market. The cutting-edge chip will be mass produced in the second half of CY2009.

The company has also fabricated a 64Gb chip that applies 4-bit-per-cell technology at the 43 nm process generation. The 3-bit-per-cell 32nm generation device uses optimized circuit design for the row decoder and extended column architecture, which significantly contributed to a 113mm2 chip. The 4-bit-per cell applies super multi-bit programming technologies, which realizes 64Gb without increase in chip size, while achieving a write speed performance of 7.8MB/s.